PART |
Description |
Maker |
MGFC42V5964 |
5.9-6.4 GHz Band 16W Internally Matched GaAs FET 5.9 - 6.4GHz BAND 16W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|
MGFC42V5867 MGFC42V586712 |
5.8`6.75GHz BAND 16W INTERNALLY MATCHED GaAs FET 5.8~6.75GHZ BAND 16W INTERNALLHY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
MAAP-000076-PKG001 MAAP-000076-SMB001 MAAP-000076- |
Amplifier, Power, 16W 1.3-2.5 GHz
|
http:// MACOM[Tyco Electronics]
|
MGFC42V6472A |
6.4 - 7.2GHz BAND 16W INTERNALLY MATCHED GaAs FET
|
http:// MITSUBISHI[Mitsubishi Electric Semiconductor]
|
MGFC42V7785A_04 MGFC42V7785A MGFC42V7785A04 |
7.7 ~ 8.5GHz BAND 16W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
MGFC42V374204 MGFC42V3742 |
3.7 ~ 4.2GHz BAND 16W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
LQP03TN4N7H04 LQP03TN5N1H04 AN26024A GRM33B30J104K |
Ultra small, Single Band LNA-IC for 2.4 GHz Band Applications
|
Panasonic Battery Group
|
UPG2162T5N-E2 UPG2162T5N-E2-A |
DPDT SWITCH FOR 2.4 GHz AND 6 GHz DUAL-BAND WIRELESS LAN
|
NEC
|
AN26031A |
Single Band LNA-IC for 2.5 GHz Band Applications
|
Panasonic Battery Group
|
TGA4501-EPU |
28-31 GHz Ka Band HPA 28000 MHz - 31000 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER
|
TriQuint Semiconductor,Inc. TriQuint Semiconductor, Inc.
|
MB54608B MB54608L MB54608LPFV MB54608LPV1 |
1.0 GHz band Low Power I/Q Modulator For Direct Conversion 800 MHz - 1000 MHz RF/MICROWAVE I/Q MODULATOR 1.0 GHz band Low Power I/Q Modulator For Direct Conversion 1.0 GHz频段的低功率的I / Q调制器的直接转换
|
Fujitsu Microelectronics Fujitsu Component Limited. FUJITSU[Fujitsu Media Devices Limited] Fujitsu, Ltd.
|